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Korea Electric Power Research Institute (KEPRI), developed the world's first rad

On September 21, 2003, KEPRI (Director: Rhew, Hong-Woo), an affiliated organization of Korea Electric Power Corporation (KEPCO) said that an apparatus removing radioactive carbon gas generated while operating heavy water reactors, has been developed for the first time in the world.
This recently developed apparatus removes more than 98% of the concentration of radioactive carbon by using an absorbent of high efficiency before disposing radioactive carbon gas generated from atomic reactor systems as waste.

Dr. Kang, Duck-Won said, "After performing an efficiency test on the Weol Sung reactor no. 3, we are planning to seek foreign markets." and "We also expect to accomplish an import substitution effect of 24 hundred million won every year."
Radioactive carbon which is mainly generated from heavy water reactors has a long half life of 5730 years and has high energy, and thus is a dangerous material classified as a nuclide which requires special treatment, along with tritium. If a large amount of radioactive carbon gas in inhaled, it may cause cancer or skin erythema.

Samsung Electronics, developed the world's first 70nm, 4 Gb, NAND flash memory

Samsung Electronics succeeded in developing the world's first 4 Gb NAND flash memory applying the 70 nm processing technology. The 70 nm processing technology is considered to be the most advanced technology in the field of semiconductors, including the already existing D
RAM or flash memory.

Hwang, Chang Gyu, president of the Memory Enterprise Department at Samsung Electronics said, "We have successively developed a 70 nm processing technology having an integration twice as strong as that of the 90 nm processing technology which was developed last year, and by the end of next year, we will be producing 4 Gb NAND flash products at the 300 mm line" in a Business Strategy Meeting held at Hotel Shilla on September 29, 2003.

President Hwang expects the development of this 70 nm flash to accelerate the trend of practically using semiconductor storage units and to urge the advent of the era of 'Digital Media', so that memory cards will eventually lead the revolution in the field of digital and storage.
Samsung Electronics also released a new 'Fusion Memory' combining the advantages of NAND and NOR flash by accomplishing a 80 nm 512 Mb D RAM producing technology.
The new 512 Mb fusion memory is a product putting the already existing memories such as NAND flash, S RAM, and a logic circuit applying a memory process relatively cheap compared with that of logic into a single chip. This product will be able to enhance more than 90% of the productivity compared with that of the 0.10 micron process which is now the current main process. A 80 nm D RAM will be produced by the latter half of 2005.

Korea Intellectual Property Office (KIPO) Officer Elected Chairman of WIPO Committee

Korea has become a chairman state for the first time since its participation in World Intellectual Property Organization (WIPO).

According to Korea Intellectual Property Office (KIPO), Ahn Jae-hyun, first secretary of the KIPO was unanimously selected as the chairman of Program and Budget Committee (PBC) in a vote by representatives of 35 countries including U.S. and Japan, in the 7th WIPO PBC held at WIPO headquarter in Geneva, Swiss, Sep. 8, this year.

The WIPO PBC, one of the core committees of WIPO, examines major programs and budget and is examining those for 2004-2005 years at this 7th meeting.
It is for the first time since Korea's joining the WIPO in March 1979 that the KIPO officer takes this important role.

KIPO first secretary Ahn, elected this time as the chairman of the PBC, had worked as a patent officer for Geneva representative team of KIPO for three years till last August.

Request for Technology Transfer

It is written to inform you that the prosecution for technology transfer is requested with reference to U.S and Japan Patent or Application Cases in such the fields as listed below. Therefore, please contact us if you want to conduct the transfer of the related technology.

1) Fields of Technology
All patents in the fields of non-aqueous secondary battery, battery charging/discharging and protecting circuitry (HO2J 7/00, H02J 7/02, H02J 7/04, H02J 7/10, H02J 7/14, H02J 7/34), and battery structure (structure patents may include NiCd and NiMH patents) except the international classes, H01M 2/28, H01M 4/06, H01M 4/14, H01M 4/24, H01M 4/32, H01M 4/34, H01M 4/42, H01M 4/44, H01M 4/68, H01M 10/06, H01M 10/20, H01M 10/24, H01M 10/30, H01M 10/32, and H01M 8*.

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Soo Chun, KIM
DOWON INTERNATIONAL

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