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 Patent News |
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| Subject : ETRI developed low-cost nonvolatile memory device |
| Date |
2010-10-29 |
Visit |
4255 |
A source technology for a nonvolatile flexible memory device that achieves a reduction of the material cost by 1/10 has been developed in Korea and the US.
The Electronics and Telecommunications Research Institute (ETRI) declared on the 6th that a technology of manufacturing a nonvolatile memory device that uses low-cost graphite for large-area has been developed in association with the ETRI, KAIST, Hanyang University, and University of Texas at Austin.
The research results were carried in “Nano Letters” that is a scientific journal published by an American Chemical Society related to naoscience and nanotechnology as presented below.
There has been strong demand for novel nonvolatile memory technology for low-cost, large-area, and low-power flexible electronics applications. Resistive memories based on metal oxide thin films have been extensively studied for application as next-generation nonvolatile memory devices. However, although the metal oxide based resistive memories have several advantages, such as good scalability, low-power consumption, and fast switching speed, their application to large-area flexible substrates has been limited due to their material characteristics and necessity of a high-temperature fabrication process. As a promising nonvolatile memory technology for large-area flexible applications, we present a graphene oxide based memory that can be easily fabricated using a room temperature spin-casting method on flexible substrates and has reliable memory performance in terms of retention and endurance. The microscopic origin of the bipolar resistive switching behavior was elucidated and is attributed to rupture and formation of conducting filaments at the top amorphous interface layer formed between the graphene oxide film and the top Al metal electrode, via high-resolution transmission electron microscopy and in situ X-ray photoemission spectroscopy. This work provides an important step for developing understanding of the fundamental physics of bipolar resistive switching in graphene oxide films, for the application to future flexible electronics.
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