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 Patent News |
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| Subject : Wisepower Obtained US patent of LED film process |
| Date |
2009-12-30 |
Visit |
4915 |
Wisepower said that Grandtech, as its affiliate, has obtained a US patent regarding a technology for producing a GaN (gallium nitride) wafer, which is an important device in realizing a light emitting diode (LED) with high brightness and efficiency.
This US patent relates to GaN film formation using a Hydride VAPOR Phase Epitaxy (HVPE) system, that is, a hydrogen vapor deposition equipment that was invented by Grandtech. Wisepower said that this US patent is in regards to a film formation technology of a method of manufacturing an epi wafer, and the performance of an LED chip is determined according to the film formation technology.
LED chip processes are largely classified into an epi process for forming a compound film layer on a substrate, a fab process for forming an LED chip, or a packaging process for finalizing a completed LED. The epi process is for forming an epi wafer by forming a semiconductor layer with a metal compound thin film.
The obtained US patent technology relates to a technology for forming a thin film, which is the most important process in a method of manufacturing an epi wafer. In the method of manufacturing an epi wafer, it is most important to form a GaN film layer on a sapphire substrate.
President Giho PARK of Wisepower said that "Grandtech will realize widespread use of hydrogen vapor deposition equipment and its patent technology to enter into the high brightness and efficiency LED chip markets” and “upon this opportunity due to this patent, we will expedite release of hydrogen vapor deposition equipment and GaN substrates”. |
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